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ZXMD63N02X
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
±12
Unit
V
V
Continuous Drain Current
Steady
State
@ V GS = 10V; T A = +25°C (Note 5 & 6)
@ V GS = 10V; T A = +70°C (Note 5 & 6)
@ V GS = 10V; T A = +100°C (Note 5 & 6)
I D
2.5
1.9
0.78
A
Pulsed Drain Current
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
(Notes 6 & 7)
(Notes 5 & 6)
(Notes 6 & 7)
I DM
I S
I SM
19
1.5
19
A
A
A
Thermal Characteristics
Characteristic
(Notes 6 & 8)
Symbol
Value
0.87
Unit
Power Dissipation
(Notes 5 & 6)
P D
1.25
W
(Notes 8 & 9)
(Notes 6 & 8)
1.04
143
Thermal Resistance, Junction to Ambient
(Notes 5 & 6)
R θ JA
100
°C/W
(Notes 8 & 9)
120
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 10)
R θ JL
T J , T STG
84.9
-55 to +150
°C/W
°C
Notes:
5. For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.
6. For device with one active die.
7. Repetitive rating - 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 μ s – pulse width limited by maximum junction temperature.
8. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
9. For device with two active die running at equal power.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMN63N02X
Document number: DS33500 Rev. 2 - 2
2 of 8
www.diodes.com
June 2012
? Diodes Incorporated
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